Samsung Electronics Announces Advanced Graphics Memory for High-end Multimedia Applications

(Auszug aus der Pressemitteilung)

Seoul, Korea, June 21, 2005 – Samsung Electronics Co., Ltd., the leader in

advanced semiconductor technology, today announced that it has developed the
industry’s fastest 2.0 gigabit per second (Gbps) 90 nanometer (nm) 512Mb
graphics double data rate 3 (GDDR3) dynamic random access memory (DRAM).

Samsung’s new 2.0Gbps high-speed graphics solution runs at up to
8.0GigaBytes per second (GBps), which is 70 percent faster than the
conventional 1.2Gbps device, making it ideal for high-quality images and
fast animation in PCs, workstations and high-end game consoles.

Samsung also initiated mass production of its 1.6Gbps 512Mb GDDR3, which was
developed in December 2004. Generating 6.4GBps transmission rates, the
1.6Gbps GDDR3 is available in graphic cards with a maximum density of 1GB by
combining sixteen monolithic 512Mb GDDR3s together. The new GDDR3
incorporates a JEDEC standard 136-ball package.

512Mb GDDR3 is expected to support the faster data transmission rate for
higher resolution images in next generation game consoles.

Samsung’s technology diversification strategy is reflected in its
comprehensive graphics memory line up. Since introducing the industry’s
first 1.0Gbps 128Mbit GDDR1/GDDR2 in 2002, Samsung has now become the first
to secure a full line up of GDDR memory technology.

Market research firm, Mercury Research, predicts that the global graphics
DRAM market will increase 43 percent to $1.5 billion (US) in 2005 and exceed
$2 billion (US) in 2006.

Samsung’s 1.6Gbps 90nm 512Mb GDDR3 DRAMs are available now in volume
production worldwide.