(Auszug aus der Pressemitteilung)
SEOUL, KOREA – April 2, 2008 – Samsung Electronics Co., Ltd., the world’s leading supplier of advanced memory technology, today announced that its complete line of 800 Mbps (megabits per second) and 1066 Mbps DDR3 SoDIMMs (small outline dual-inline memory modules) has passed Intel® system validation testing for use with Intel’s first DDR3 mobile platform – the upcoming Intel® Centrino® 2 processor technology.
Samsung’s six DDR3 SoDIMMs make use of new 60-nm class technology, whose high yields and increased production efficiencies will insure an ample supply of the notebook memory.
“We are pleased that our DDR3 SoDIMMs have been validated by Intel for use with the Mobile Intel® 45 Express Chipset family,” said Gerd Schauss, director memory marketing, Samsung Semiconductor Europe. “Samsung has been the leading force behind DDR3’s development, and we’re now gearing up to meet the market demand anticipated after introduction of the Intel® Centrino® 2 processor technology.”
“Samsung’s DDR3 memory is successfully validated on Intel’s next generation mobile platform,” said Ali Sarabi, director of industry initiatives & pathfinding at Intel Corp. “DDR3 is well on its way to becoming the memory technology of choice for leadership computing platforms in 2008 and beyond.”
The combination of Samsung DDR3 SoDIMMs and the Intel® Centrino® 2 processor technology will provide higher performance at lower power levels and will become a major driver for early volume production of DDR3 beginning in the second quarter of 2008.
Samsung is already mass producing DDR3 at speeds up to 1333 Mbps in a UDIMM (unbuffered DIMM) format. These DDR3 modules are now being installed in high-end desktop PCs.
Samsung expects that at least 10 percent of the DRAM market will be DDR3s in the second half of this year.