Samsung to Introduce 32-Gigabyte Performance-enhancing Memory Module for Servers

(Auszug aus der Pressemitteilung)

SEOUL, Korea, June 29, 2010 – Samsung Electronics Co., Ltd., the world

leader in advanced memory technology, announced today that it has developed
the industry’s first 32 gigabyte (GB) load-reduced, dual-inline memory
module (LRDIMM), for server applications.

Samsung will begin mass producing the 32GB LRDIMM in the second half of
this year, giving it the largest family of DRAM offerings in the industry.

Using cutting-edge 40nanometer-class* four gigabit (4Gb) DDR3 chips, which
Samsung introduced earlier this year, the new 32GB LRDIMM accommodates next
generation servers designed for virtualization, cloud computing and other
high-capacity applications.

„In developing the industry’s first load-reduced module with 40 nm-class*
DDR3 technology, we are underscoring our determination to combine the best
of capacity and performance for the newest generation of servers,“ said
Dong-Soo Jun, executive vice president, memory marketing, Samsung
Electronics.

Samsung’s 32GB LRDIMM prototype consists of 72 4Gb DDR3 chips and an
additional memory buffer chip to help reduce the load on the memory
subsystem by as much as 75 percent.

By using 32GB LRDIMMs, memory capacity can rise up to 384 gigabytes per
CPU. In a two-way server system, capacity can be increased up to 768GB, or
about 1.5 times that of a 512GB server system equipped with 32GB DDR3
RDIMMs.

A server equipped with LRDIMMs can process data at 1,333 megabit per second
(Mbps), approximately 70 percent faster than the previous speed of 800
Mbps. Samsung’s LRDIMMs operate at 1.35 or 1.5 volts.