Micron, Nanya Unveil 42-Nanometer DRAM Process Technology – Reduces Memory Power Consumption, Increases Performance
Companies Continue DRAM Advancement with 3X-nanometer Process Technology Working in the Lab
BOISE, Idaho, and TAOYUAN, Taiwan, February 9, 2010 – Micron Technology, Inc. and Nanya Technology Corporation today announced that they have jointly developed a 2-gigabit (Gb) DDR3 memory device using their new...
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