(Auszug aus der Pressemitteilung)
San Jose, California – April 27, 2008 – Super Talent Technology, a leading manufacturer of DRAM memory modules and flash storage solutions, today launched a DDR3-1800 4GB kit (2x 2GB) in their extreme performance Project X family.
Super Talent’s Project X memory is widely regarded as the world’s most advanced DDR3. “This represents another major first-to-market milestone for Super Talent”, commented Super Talent Marketing Director, Joe James. “While competitors are only able to produce 4GB kits up to DDR3-1600, we’ve engineered a kit that performs at elevated clock speeds while still supporting aggressive latencies.”
This Project X kit is built with the fastest available, hand selected Micron DRAM chips, and is stress tested as a matched pair on a dual channel Asus® Striker II Extreme motherboard.
Model and Description
W1800UX4GP DDR3-1800 PC3-14400 4GB Kit (2x 2GB) 8-8-8-24 1.9V
Project X memory is developed in Super Talent’s Silicon Valley Engineering Labs to deliver the highest attainable DDR3 memory performance. Project X memory X-AntiVirus: checked by AntiVir MailGuard (Version: 18.104.22.168; AVE: 22.214.171.124; VDF: 126.96.36.199) combines blistering fast clock speeds with aggressively tuned latencies.
Project X employs an extreme cooling solution that offers double the surface area and 106% more aluminum mass than standard heat spreaders. With Super Talent’s special thermal adhesive, this cooling solution provides superior heat dissipation that results in a cooler, faster memory device.
All Project X memory is built and tested in Super Talent’s San Jose, California headquarters, and is backed with a lifetime warranty. The W1800UX4GP kit is available now from selected fine computer stores 399,– Euro.