Samsung Announces Industry’s First Mass Production of 30-nm-class Asynchronous DDR NAND Flash

(Auszug aus der Pressemitteilung)

Seoul, Korea, December 1, 2009 – Samsung Electronics Co., Ltd., the world

leader in advanced semiconductor technology solutions, today announced the
industry�s first mass production of its 30-nanometer (nm) class, 32 gigabit
(Gb), multi-level-cell (MLC) NAND memory with an asynchronous DDR (double
data rate) interface. The company said it began shipping initial production
of its DDR NAND to major OEMs at the end of November.

DDR NAND will sharply raise the read performance of mobile devices
requiring high-speeds and large amounts of storage space. Samsung’s new DDR
MLC NAND chip, which reads at 133 megabits per second (Mbps), would replace
single data rate (SDR) MLC NAND, which has an overall read performance of
40Mbps.

„With the new DDR MLC NAND, double data rate transmission can be achieved
without increasing power consumption, giving designers a lot more latitude
in introducing diverse CE devices,“ said Soo-In Cho, executive vice
president and general manager of the Memory Division at Samsung
Electronics.

He added, „Samsung’s accelerated push toward providing memory solutions at
much higher speeds will enable faster introduction of high-performance
mobile devices that deliver added convenience and greater value to
consumers.“

Samsung’s new asynchronous DDR MLC NAND can be used in SSDs for PCs,
premium SD memory cards for smartphones, and in Samsung’s proprietary
moviNANDTM memory. In addition, the high-density, high-performance memory
is an ideal solution for personal media players (PMPs), MP3 players and car
navigation systems (CNS).

Production of the Samsung 30nm-class DDR MLC NAND comes just eight months
after the company announced availability of its 30nm-class 32Gb MLC NAND.
Use of 30nm-class DDR NAND enables premium memory cards to register 60Mbps
read speeds, at least a 300 percent performance gain compared to SDR
NAND-based memory cards with an average 17Mbps read speed.

Mass production of asynchronous DDR MLC NAND, like the introduction of
30nm-class 3-bit MLC NAND (see separate announcement also just issued) is
expected to substantially raise the portion of NAND flash production
devoted to high density consumer electronics (32GB and above) to
accommodate increased video sharing.

According to market research firm Gartner Dataquest, the global NAND flash
memory market is forecast to be worth US$13.8 billion in 2009 and reach
US$23.6 billion by 2012.