Samsung Samples Smallest 2 Gigabit DDR3, with Power Savings of Over 40 percent for Servers and PCs

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Seoul, Korea – September 29, 2008 – Samsung Electronics Co., Ltd., the

world leader in advanced memory technology, announced today that it is
sampling the industry’s smallest two gigabit (Gb) DDR3 devices. By using 50
nanometer (nm)class circuit technology, productivity of the new devices is
60 percent higher than DDR2 devices of an equivalent density. The new 2Gb
DDR3-based modules, which enable use of up to 16 gigabyte (GB) RIMMs
(registered in-line memory modules), will save over 40 percent of the power
of 1Gb DDR3 memory modules.

“With our new 2Gb DDR3 components, Samsung is presenting the perfect
solution for designers. Our aim was to maximize density alternatives and
power savings”, said Gerd Schauss, Director Memory Marketing, Samsung
Semiconductor Europe.

The new device’s small form factor enables the use of up to 8GB of memory
chips for RIMMs (registered in-line memory modules), as well as 4GBs for
SODIMMs (small outline dual in-line memory modules) and UDIMMs
(unregistered in-line memory modules), without the need for stacking
components. In addition, 2Gb DDR3 RIMMs can be designed to 16GBs by
applying dual-die packages.

The monolithic 2Gb chips are energy-efficient solutions for high-density,
high-performance memory applications. The 2Gb chip replaces dual-chip
solutions having two 1Gb memory devices, and reduces power consumption by
at least 40 percent, which is critical in server applications as well as
next-generation desktops and notebooks. The 2Gb device supports a data rate
of up to 1.3 gigabits per second (Gbps) at 1.5 or 1.35 volts, up to
1.6-times faster than a 800Mbps 1Gb-based dual-die package. In addition,
the reduced number of DDR3 chips lowers heat emissions.

The 50nm-class process being used to manufacture Samsung’s 2Gb DDR3 is
expected to become Samsung’s primary DRAM process technology next year.
Mass production is slated to begin later this year.

Samsung’s record of DRAM innovation stretches from the introduction of
150nm-class DRAM technology in 2000, to volume production of 1Gb DDR2 using
50nm-class process technology last April.

According to market research firm IDC, DDR3 is expected to account for 29
percent of the total DRAM market in units sold and attain a 72 percent
market share by 2011. In addition, the segment made up of 2Gb devices is
forecast to grow from 3 percent in 2009 to 33 percent in 2011.