(Auszug aus der Pressemitteilung)
SEOUL, KOREA – January 29, 2009 – Samsung Electronics Co., Ltd., the world
significant advancement in the push for higher volume memory chips by
developing the world’s first four gigabit (Gb) DDR3 DRAM chip, using 50
nanometer (nm) process technology.
With more and more data centers seeking a reduction in the number of
servers they use, the development of low-power 4Gb DDR3 has become critical
in reducing data center costs, improving server time management and
increasing overall efficiency.
For the new generation of „green“ servers, the 4Gb DDR3’s high density
combined with its lower level of power consumption will not only provide a
reduction in electricity bills, but also a cutback in installment fees,
maintenance fees and repair fees involving power suppliers and
„In order to lead the industry to higher DRAM densities we have leveraged
our strength in innovation to develop the first 4Gb DDR3“ said Gerd
Schauss, Director Memory Marketing, Samsung Semiconductor Europe. „By
designing our 4Gb DDR3 using state-of-the-art 50-nm class technology, we
are setting the stage for what ultimately will result in significant
cost-savings, for servers and for the overall computing market,“ he added.
The 4Gb DDR3 can be produced in 16 gigabyte (GB) registered dual in-line
memory modules (RDIMM) for servers, as well as 8GB unbuffered DIMM (UDIMM)
for workstations and desktop PCs, and 8GB small outline DIMM (SODIMM) for
laptops. By applying dual-die package technology, this new device can
deliver modules of up to 32GB – offering twice as much capacity as memory
modules based on the previous highest chip density of 2Gb.
Designed to be low-powered, the 4Gb DDR3 DRAM operates at 1.35 volts (V),
therein improving its throughput by 20 percent over a 1.5V DDR3. Its
maximum speed is 1.6 gigabits per second (Gbps).
In 16GB module configurations, 4Gb DDR3 can consume 40 percent less power
than 2Gb DDR3 because of its higher density and because it uses only half
the DRAM (32 vs. 64 chips).
With an aggressive conversion to 50nm-class production for higher density
DDR3, Samsung intends to remain the clear leader in high-volume/high-performance DRAM.
In September 2008, Samsung announced its development of the world’s first
50 nm-class 2Gb DDR3 DRAM. Now, just five months after, it has established
the industry’s broadest line-up of high-performance DDR3 products using 50
nm-class process technology (4Gb, 2Gb, 1Gb).
As forecasts have the amount of memory per server doubling every two years,
the development of high-density DRAM is expected to keep pace, expanding to
other applications such as notebooks and desktop PCs.
According to the International Data Corporation (IDC), a market research
and analysis firm, the worldwide DDR3 DRAM market will account for 29
percent of the total DRAM market in 2009 and 75 percent in 2011. In
addition, IDC estimates that 2Gb-or-higher DDR3 DRAM will make up three
percent of the total DRAM market in 2009 and 33 percent in 2011 (units in
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