(Auszug aus der Pressemitteilung)
SEOUL, Korea – February 1, 2010 – Samsung Electronics Co., Ltd., the world
the industry’s first 30-nanometer-class DRAM has just successfully
completed customer evaluations, in two gigabit (Gb) densities. With DDR3
SDRAM becoming the predominant main memory this quarter, Samsung’s
aggressive advancement in process technology will raise productivity and
expedite dissemination of high performance, 1.5V and 1.35V DDR3 for
servers, desktops and notebook PCs.
“Our accelerated development of next generation 30nm-class DRAM should keep
us in the most competitive position in the memory market,” said Soo-In Cho,
president, Memory Division, Samsung Electronics.
He added, “our 30nm-class process technology will provide the most advanced
low-power DDR3 available today and therein the most efficient DRAM
solutions anywhere for the introduction of consumer electronics devices and
server systems.”
The 30nm-class process when applied to DDR3 mass production raises
productivity by 60 percent over 40nm-class DDR3. This will result in a
doubling of production cost-efficiency compared to DRAM produced using 50nm
to 60nm-class technology.
The 30nm-class 2Gb, Green DRAM reduces power consumption by up to 30
percent over 50nm-class DRAM. A 4-Gigabyte (GB), 30nm module when used in a
new-generation notebook will consume only three watts per hour, which is
just three percent of the total power usage of a notebook.
The new DDR3 will be used in a broader range of products, from servers to
notebooks, desktops, and future versions of netbooks and mobile devices.
The 30nm-class DDR3 is scheduled for mass production in the second half of
this year.
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