Samsung Now Producing Industry’s first, Highest Density Mobile LPDDR2 Memory, Using 20nm-class Technology

(Auszug aus der Pressemitteilung)

SEOUL, Korea – May 17, 2012 – Samsung Electronics Co., Ltd., a global

leader in advanced semiconductor technology solutions, announced
today that it has begun producing the industry’s first four gigabit
(Gb), low power double-data-rate 2 (LPDDR2) memory using 20 nanometer
(nm) class* technology. The mobile DRAM (dynamic random access
memory) chip, which went into mass production last month, will help
the market to deliver advanced devices that are faster, lighter and
provide longer battery life than today’s mobile devices.

„Samsung began expanding the market for 4Gb DRAM last year with the
first mass-produced 30nm-class DRAM, and now we are working on
capturing most of the advanced memory market with our new 20nm-class
4Gb DRAM,“ said Wanhoon Hong, executive vice president, memory sales
& marketing, Samsung Electronics. „In the second half of this year,
we expect to strongly increase the portion of 20nm-class DRAM within
our overall DRAM output to make the 4Gb DRAM line-up the mainstream
product in DRAM production, and therefore keeping the leadership
position in the premium market and strengthening the competitive
edge.“

As large-screen tablets and smartphones equipped with quad-core CPUs
lead rapid growth of the mobile market, there is greater demand for
more energy-efficient and higher-capacity memory products that
guarantee longer battery life, as well as faster processing speed.

Samsung’s 20nm-class 4Gb mobile DRAM represents the thinnest,
highest-density, and highest-performance mobile memory, which enables
ultra-slim mobile designs, as well as superior next-generation
systems for both mobile manufacturers and enterprise solution
providers.

Furthermore, based on the 4Gb components, Samsung can deliver 2
Gigabyte (GB) solutions that boast razor-thin thickness of 0.8
millimeters (mm), which stack four 4Gb LPDDR2 chips in a single
LPDDR2 package. This new package is approximately 20 percent thinner
than 2GB packages that stack four 30nm-class 4Gb LPDDR2 chips. Also,
the new 2GB package can process data at up to 1,066 megabits per
second (Mbps), while spending the same amount of power as that of a
previous 30nm-class 2GB package. Benefits of the new 20nm-class 4Gb
LPDDR2 will help speed up the growth of the 4Gb DRAM market.

Samsung expects the newly introduced 20nm-class 4Gb LPDDR2 will
rapidly replace 30nm-class 2Gb-based 1GB LPDDR2 that was in limited
supply at the 0.8 mm thickness.

Production of 20nm-class 4Gb LPDDR2 ensures Samsung the widest range
of mobile DRAM products in the industry. This follows the company’s
previous achievement with 20nm-class DRAM, when it provided the
industry’s first 20nm-class 8GB DDR3 modules for notebook PCs in
March.

According to IHS iSuppli, shipments of 4Gb DRAM will steadily
increase, taking approximately 13 percent of total DRAM shipments in
2012, 49 percent in 2013 and 63 percent in 2014, with 4Gb DRAM
becoming the mainstream chip in the DRAM market around the end of
2013.